Photonic Crystal Cavity With Double Heterostructure in GaN Bulk

Photonic Crystal Cavity With Double Heterostructure in GaN Bulk

In this study, the photonic crystal cavity has been designed, fabricated, and characterized in GaN bulk materials with the double heterostructure, which can provide high Q-factor. The cavity is characterized by optical pumping. The resonant mode is observed at the wavelength of 362 nm. The threshold...

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Veröffentlicht in:IEEE photonics journal 2013-10, Vol.5 (5), p.2202606-2202606
Hauptverfasser: Yu-Chieh Cheng, Dong-Po Cai, Chii-Chang Chen, Chia-Hua Chan, Chien-Chieh Lee, Ya-Lun Tsai
Format: Artikel
Sprache:eng
Schlagworte:
Cavity resonators
double heterostructure
Gallium nitride
GaN
Laser excitation
Lattices
Photonic Crystals
Photonics
Q-factor
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Zusammenfassung:In this study, the photonic crystal cavity has been designed, fabricated, and characterized in GaN bulk materials with the double heterostructure, which can provide high Q-factor. The cavity is characterized by optical pumping. The resonant mode is observed at the wavelength of 362 nm. The threshold of excitation power is found to be 0.9 mW, corresponding to the power density of 12.7 kW/ cm 2 . The Q-factor of the cavity is measured to be as high as 10 4 .
ISSN:1943-0655
1943-0647
DOI:10.1109/JPHOT.2013.2280343