In Situ Plasma‐Grown Silicon‐Oxide for Polysilicon Passivating Contacts

In Situ Plasma‐Grown Silicon‐Oxide for Polysilicon Passivating Contacts

Large‐scale manufacturing of polysilicon‐based passivating contacts for high‐efficiency crystalline silicon (c‐Si) solar cells demands simple fabrication of thermally stable SiOx films with well controlled microstructure and nanoscale thickness to enable quantum‐mechanical tunneling. Here, plasma‐di...

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Veröffentlicht in:Advanced materials interfaces 2020-11, Vol.7 (21), p.n/a
Hauptverfasser: Alzahrani, Areej, Allen, Thomas G., De Bastiani, Michele, Van Kerschaver, Emmanuel, Harrison, George T., Liu, Wenzhu, De Wolf, Stefaan
Format: Artikel
Sprache:eng
Schlagworte:
Circuits
Contact resistance
Photovoltaic cells
Plasma
Plasma processing
Polysilicon
polysilicon passivating contacts
Silicon
Solar cells
Structural integrity
Thermal stability
Thickness
Thin films
Wafers
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Beschreibung
Zusammenfassung:Large‐scale manufacturing of polysilicon‐based passivating contacts for high‐efficiency crystalline silicon (c‐Si) solar cells demands simple fabrication of thermally stable SiOx films with well controlled microstructure and nanoscale thickness to enable quantum‐mechanical tunneling. Here, plasma‐dissociated CO2 is investigated to grow in situ thin (
ISSN:2196-7350
2196-7350
DOI:10.1002/admi.202000589