3D CoMoSe4 Nanosheet Arrays Converted Directly from Hydrothermally Processed CoMoO4 Nanosheet Arrays by Plasma-Assisted Selenization Process Toward Excellent Anode Material in Sodium-Ion Battery

In this work, three-dimensional (3D) CoMoSe 4 nanosheet arrays on network fibers of a carbon cloth denoted as CoMoSe 4 @C converted directly from CoMoO 4 nanosheet arrays prepared by a hydrothermal process followed by the plasma-assisted selenization at a low temperature of 450 °C as an anode for so...

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Veröffentlicht in:Nanoscale research letters 2019-06, Vol.14 (1), p.1-9, Article 213
Hauptverfasser: Zhang, Shan, Ai, Yuanfei, Wu, Shu-Chi, Liao, Hsiang-Ju, Su, Teng-Yu, Chen, Jyun-Hong, Wang, Chuan-Hsun, Lee, Ling, Chen, Yu-Ze, Xu, Binbin, Tang, Shin-Yi, Wu, Ding Chou, Lee, Shao-Shin, Yin, Jun, Li, Jing, Kang, Junyong, Chueh, Yu-Lun
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Sprache:eng
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Zusammenfassung:In this work, three-dimensional (3D) CoMoSe 4 nanosheet arrays on network fibers of a carbon cloth denoted as CoMoSe 4 @C converted directly from CoMoO 4 nanosheet arrays prepared by a hydrothermal process followed by the plasma-assisted selenization at a low temperature of 450 °C as an anode for sodium-ion battery (SIB) were demonstrated for the first time. With the plasma-assisted treatment on the selenization process, oxygen (O) atoms can be replaced by selenium (Se) atoms without the degradation on morphology at a low selenization temperature of 450 °C. Owing to the high specific surface area from the well-defined 3D structure, high electron conductivity, and bi-metal electrochemical activity, the superior performance with a large sodium-ion storage of 475 mA h g −1 under 0.5–3 V potential range at 0.1 A g −1 was accomplished by using this CoMoSe 4 @C as the electrode. Additionally, the capacity retention was well maintained over 80 % from the second cycle, exhibiting a satisfied capacity of 301 mA h g −1 even after 50 cycles. The work delivered a new approach to prepare a binary transition metallic selenide and definitely enriches the possibilities for promising anode materials in SIBs with high performances.
ISSN:1931-7573
1556-276X
DOI:10.1186/s11671-019-3035-6