A 250 m Direct Time-of-Flight Ranging System Based on a Synthesis of Sub-Ranging Images and a Vertical Avalanche Photo-Diodes (VAPD) CMOS Image Sensor

A 250 m Direct Time-of-Flight Ranging System Based on a Synthesis of Sub-Ranging Images and a Vertical Avalanche Photo-Diodes (VAPD) CMOS Image Sensor

We have developed a direct time-of-flight (TOF) 250 m ranging Complementary Metal Oxide Semiconductor (CMOS) image sensor (CIS) based on a 688 × 384 pixels array of vertical avalanche photodiodes (VAPD). Each pixel of the CIS comprises VAPD with a standard four transistor pixel circuit equipped with...

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Veröffentlicht in:Sensors (Basel, Switzerland) Switzerland), 2018-10, Vol.18 (11), p.3642
Hauptverfasser: Hirose, Yutaka, Koyama, Shinzo, Ishii, Motonori, Saitou, Shigeru, Takemoto, Masato, Nose, Yugo, Inoue, Akito, Sakata, Yusuke, Sugiura, Yuki, Kabe, Tatsuya, Usuda, Manabu, Kasuga, Shigetaka, Mori, Mitsuyoshi, Odagawa, Akihiro, Tanaka, Tsuyoshi
Format: Artikel
Sprache:eng
Schlagworte:
avalanche photodiode
CMOS image sensor
photon counting
ranging
time-of-flight
vertical avalanche photodiode
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Zusammenfassung:We have developed a direct time-of-flight (TOF) 250 m ranging Complementary Metal Oxide Semiconductor (CMOS) image sensor (CIS) based on a 688 × 384 pixels array of vertical avalanche photodiodes (VAPD). Each pixel of the CIS comprises VAPD with a standard four transistor pixel circuit equipped with an analogue capacitor to accumulate or count avalanche pulses. High power near infrared (NIR) short (
ISSN:1424-8220
1424-8220
DOI:10.3390/s18113642