Uniform doping of graphene close to the Dirac point by polymer-assisted assembly of molecular dopants

Tuning the charge carrier density of two-dimensional (2D) materials by incorporating dopants into the crystal lattice is a challenging task. An attractive alternative is the surface transfer doping by adsorption of molecules on 2D crystals, which can lead to ordered molecular arrays. However, such s...

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Veröffentlicht in:Nature communications 2018-09, Vol.9 (1), p.3956-7, Article 3956
Hauptverfasser: He, Hans, Kim, Kyung Ho, Danilov, Andrey, Montemurro, Domenico, Yu, Liyang, Park, Yung Woo, Lombardi, Floriana, Bauch, Thilo, Moth-Poulsen, Kasper, Iakimov, Tihomir, Yakimova, Rositsa, Malmberg, Per, Müller, Christian, Kubatkin, Sergey, Lara-Avila, Samuel
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Sprache:eng
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Zusammenfassung:Tuning the charge carrier density of two-dimensional (2D) materials by incorporating dopants into the crystal lattice is a challenging task. An attractive alternative is the surface transfer doping by adsorption of molecules on 2D crystals, which can lead to ordered molecular arrays. However, such systems, demonstrated in ultra-high vacuum conditions (UHV), are often unstable in ambient conditions. Here we show that air-stable doping of epitaxial graphene on SiC—achieved by spin-coating deposition of 2,3,5,6-tetrafluoro-tetracyano-quino-dimethane (F4TCNQ) incorporated in poly(methyl-methacrylate)—proceeds via the spontaneous accumulation of dopants at the graphene-polymer interface and by the formation of a charge-transfer complex that yields low-disorder, charge-neutral, large-area graphene with carrier mobilities ~70 000 cm 2  V −1  s −1 at cryogenic temperatures. The assembly of dopants on 2D materials assisted by a polymer matrix, demonstrated by spin-coating wafer-scale substrates in ambient conditions, opens up a scalable technological route toward expanding the functionality of 2D materials. Incorporating dopants in the graphene lattice to tune its electronic properties is a challenging task. Here, the authors report a strategy to dope epitaxial large-area graphene on SiC by means of spin-coating deposition of F4TCNQ polymers in ambient conditions.
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-018-06352-5