Investigation of Dynamic Threshold Voltage Behavior in Semi-Floating Gate Transistor for Normally-Off AlGaN/GaN HEMT
In this paper, an inverter composed of semi-floating gate (SFG) transistor and a load resistor was analyzed. Varying threshold voltage (V th ) during switching was observed. This dynamic V th behavior of SFG device is because of the special device structure of SFG transistors. Based on the V th -pro...
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Veröffentlicht in: | IEEE journal of the Electron Devices Society 2017-03, Vol.5 (2), p.117-121 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this paper, an inverter composed of semi-floating gate (SFG) transistor and a load resistor was analyzed. Varying threshold voltage (V th ) during switching was observed. This dynamic V th behavior of SFG device is because of the special device structure of SFG transistors. Based on the V th -programmable behavior of the SFG transistor, a SFG-based GaN high electron mobility transistor was proposed and enhancement-mode was realized with writing-0 into the transistor during every switching operation by simulation. |
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ISSN: | 2168-6734 2168-6734 |
DOI: | 10.1109/JEDS.2017.2647979 |