Ultrathin PEDOT:PSS Enables Colorful and Efficient Perovskite Light‐Emitting Diodes

Recently, metal halide perovskite light‐emitting diodes (Pero‐LEDs) have achieved significant improvement in device performance, especially for external quantum efficiency (EQE). And EQE is mostly determined by internal quantum efficiency of the emitting material, charge injection balancing factor (ηc), and light extraction efficiency (LEE) of the device. Herein, an ultrathin poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (UT‐PEDOT:PSS) hole transporter layer is prepared by a water stripping method, and the UT‐PEDOT:PSS can enhance ηc and LEE simultaneously in Pero‐LEDs, mostly due to the improved carrier mobility, more matched energy level alignment, and reduced photon loss. More importantly, the performance enhancement from UT‐PEDOT:PSS is quite universal and applicable in different kinds of Pero‐LEDs. As a result, the EQEs of Pero‐LEDs based on 3D, quasi‐3D, and quasi‐2D perovskites obtain enhancements of 42%, 87%, and 111%, and the corresponding maximum EQE reaches 17.6%, 15.0%, and 6.8%, respectively. The popular poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) hole transporter layer in perovskite light‐emitting diodes will cause some loss of photons and result in limited device performance. Herein, to overcome this problem, an ultrathin PEDOT:PSS is prepared, and performance is successfully improved in 3D, quasi‐3D, and quasi‐2D perovskites.