Sensitive Planar Microwave Diode on the Base of Ternary AlxGa1-xAs Semiconductor Compound

The article presents the results of experimental studies of the dc and high-frequency electrical characteristics of planar microwave diodes that are fabricated on the base of the n-AlxGa1-xAs layer (x = 0, 0.15 or 0.3), epitaxially grown on a semi-insulating GaAs substrate. The diodes can serve as r...

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Veröffentlicht in:Sensors (Basel, Switzerland) Switzerland), 2021-06, Vol.21 (13), p.4487
Hauptverfasser: Anbinderis, Maksimas, Ašmontas, Steponas, Čerškus, Aurimas, Gradauskas, Jonas, Lučun, Andžej, Šilėnas, Aldis, Sužiedėlis, Algirdas
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Sprache:eng
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Zusammenfassung:The article presents the results of experimental studies of the dc and high-frequency electrical characteristics of planar microwave diodes that are fabricated on the base of the n-AlxGa1-xAs layer (x = 0, 0.15 or 0.3), epitaxially grown on a semi-insulating GaAs substrate. The diodes can serve as reliable and inexpensive sensors of microwave radiation in the millimeter wavelength range; they sense electromagnetic radiation directly, without any external bias voltage at room temperature. The investigation revealed a strong dependence of the detection properties of the microwave diodes on AlAs mole fraction x: in the Ka microwave frequency range, the median value of voltage responsivity is several volts per watt in the case of GaAs-based diodes (x = 0), and it substantially increases, reaching hundreds of volts per watt at higher x values. Also, a model enabling us to forecast the responsivity of the sensor in other frequency ranges is proposed.
ISSN:1424-8220
1424-8220
DOI:10.3390/s21134487