Features of the longitudinal and transverse tensoresistances of low-resistance n-Si

Features of longitudinal and transverse tensoresistances and the tenso-Hall effect in low-resistance n-Si crystals doped with phosphorus, antimony, and arsenic were studied. The impurity-specific mechanisms which lead to changes in the number of charge carriers (“incomplete ionization” and deactivation of impurities), as well as a change in the efficiency of the scattering on impurity density fluctuations were considered to explain the tensoresistive peculiarities. It is supposed that the dominant factor determining the efficiency of scattering on impurity density fluctuations is the value of the lattice strain introduced by the impurity itself. An increase in the transverse tensoresistance with pressure increasing revealed in n-Si samples doped with phosphorus and antimony was explained by the fluctuations of impurity density. For these samples, a maximum and instabilities on dependencies of the tenso-Hall effect are observed at 4.2 K. An increase in the measurement temperature, the manifestation of instabilities is weakened. •Impurity density fluctuations cause transverse tensoresistance to increase.•Lattice strain introduced by impurity determines scattering efficiency.•Impurity-specific features explain tenso-Hall effect maxima.•The instabilities of the tenso-Hall effect decrease with increasing temperature.