Bioresorbable Resistive Switching Device Based on Organic/Inorganic Hybrid Structure for Transient Memory Applications

Biocompatible and biodegradable resistive random‐access memory devices using Mg/agarose/Al2O3/Mg‐based organic/inorganic structures are reported, showing nonvolatile bipolar resistive switching memory behavior. The organic/inorganic‐based hybrid active layer has large working windows (≈106) and is highly stable up to 200 continuous sweeps. The device can be also tuned into multilevel memory by varying the compliance current from a few microamperes to several milliamperes. The formation of metallic filaments inside the active layer during SET and RESET stages using an X‐ray photoelectron spectroscopy depth profile and magnesium (Mg) metallic ions that penetrate the agarose layer is confirmed. For the bioresorbable test in both deionized water and phosphate‐buffered saline solution, the erasing time of whole devices can be adjusted by using an ultrathin ALD‐grown Al2O3 film. Biodegradable RRAMs using Mg/agarose/Al2O3/Mg showed nonvolatile bipolar resistive switching behavior. the formation of metallic filaments inside an active layer during SET and RESET using an XPS depth profile is confirmed. Magnesium ions are penetrated in the agarose layer. For the bioresorbable test in both DI water and PBS solution, the erasing time can be adjusted by an ALD‐grown Al2O3 film.