Datta-Das transistor for atomtronic circuits using artificial gauge fields

Spin-dependent electrical injection has found useful applications in storage devices, but fully operational spin-dependent semiconductor electronics remain a challenging task because of weak spin-orbit couplings and/or strong spin relaxations. These limitations are lifted considering atoms instead o...

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Veröffentlicht in:Physical review research 2022-09, Vol.4 (3), p.033180, Article 033180
Hauptverfasser: Madasu, Chetan Sriram, Hasan, Mehedi, Rathod, Ketan Damji, Kwong, Chang Chi, Wilkowski, David
Format: Artikel
Sprache:eng
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Zusammenfassung:Spin-dependent electrical injection has found useful applications in storage devices, but fully operational spin-dependent semiconductor electronics remain a challenging task because of weak spin-orbit couplings and/or strong spin relaxations. These limitations are lifted considering atoms instead of electrons or holes as spin carriers. In this emerging field of atomtronics, we demonstrate the equivalent of a Datta-Das transistor using a degenerate Fermi gas of strontium atoms as spin carriers in interaction with a tripod laser-beams scheme. We explore the dependence of spin rotation, and we identify two key control parameters which we interpret as equivalent to the gate-source and drain-source voltages of a field effect transistor. Our finding broadens the spectrum of atomtronics devices for implementation of operational spin-sensitive circuits.
ISSN:2643-1564
2643-1564
DOI:10.1103/PhysRevResearch.4.033180