A High‐Speed True Random Number Generator Based on a CuxTe1−x Diffusive Memristor

Herein, a true random number generator (TRNG) based on a CuxTe1−x diffusive memristor (DM) using its threshold switching (TS) behavior is reported. The intrinsic stochasticity of the TS behavior contributes to the randomness of the TRNG system. The switching behavior is discussed through field‐induced nucleation theory and surface diffusion dynamics. Demonstrating the performance of TRNG as a hardware security application, the DM‐based TRNG passes all 15 National Institute of Standards and Technology randomness tests without any post‐processing step, even in high‐temperature conditions. Moreover, a nonlinear‐feedback shift register is implemented for a high‐speed TRNG, producing the highest rate among the reported volatile‐memristor‐based TRNGs. A Cu0.1Te0.9/HfO2/Pt diffusive memristor has a stochastic delay and relaxation times, which can be used as random sources in a true random number generator (TRNG) system. The TRNG is implemented by a simple circuit configuration, that consists of a memristor, a nonlinear‐feedback shift register that includes an XNOR gate, an XOR gate, and shift registers with four D flip‐flops.