Failure Estimates for SiC Power MOSFETs in Space Electronics

Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space a...

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Veröffentlicht in:	Aerospace 2018-09, Vol.5 (3), p.67
Hauptverfasser:	Galloway, Kenneth F., Witulski, Arthur F., Schrimpf, Ronald D., Sternberg, Andrew L., Ball, Dennis R., Javanainen, Arto, Reed, Robert A., Sierawski, Brian D., Lauenstein, Jean-Marie
Format:	Artikel
Sprache:	eng
Schlagworte:	Approximation Bias Burnout Energy transfer Failure Failure rates Field effect transistors Heat conductivity Heavy ions High temperature Ion irradiation Irradiation Linear energy transfer (LET) Metal oxide semiconductors MOSFETs power devices power MOSFETs Radiation reliability Semiconductor devices Semiconductors Silicon Silicon carbide single event effects single-event burnout
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Beschreibung
Zusammenfassung:	Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space are estimated for burnout of 1200 V devices based on the experimental data for burnout and the expected heavy-ion linear energy transfer (LET) spectrum in space.
ISSN:	2226-4310 2226-4310
DOI:	10.3390/aerospace5030067