Aluminum nitride on insulator: Material and processing optimization for integrated photonic applications

Thin film aluminum nitride on insulator (AlNOI) has gained attention as a promising material platform for integrated photonic circuits (PICs) due to its ability to operate over a wide spectral range covering the ultra-violet to mid-infrared regions, while enabling a broad range of passive photonic functionalities. This study aims to optimize sputtered AlNOI films for PICs, with an emphasis on the spectroscopic ellipsometry study over a range from 0.19 µm to 25 µm. Furthermore, we discuss our approach for fabricating AlNOI PICs components, with a particular focus on optimizing the etching process to attain smooth sidewall waveguides.