Universality of quantum phase transitions in the integer and fractional quantum Hall regimes
Fractional quantum Hall (FQH) phases emerge due to strong electronic interactions and are characterized by anyonic quasiparticles, each distinguished by unique topological parameters, fractional charge, and statistics. In contrast, the integer quantum Hall (IQH) effects can be understood from the ba...
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Veröffentlicht in: | Nature communications 2024-10, Vol.15 (1), p.8535-7, Article 8535 |
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Sprache: | eng |
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Zusammenfassung: | Fractional quantum Hall (FQH) phases emerge due to strong electronic interactions and are characterized by anyonic quasiparticles, each distinguished by unique topological parameters, fractional charge, and statistics. In contrast, the integer quantum Hall (IQH) effects can be understood from the band topology of non-interacting electrons. We report a surprising super-universality of the critical behavior across all FQH and IQH transitions. Contrary to the anticipated state-dependent critical exponents, our findings reveal the same critical scaling exponent
κ
= 0.41 ± 0.02 and localization length exponent
γ
= 2.4 ± 0.2 for fractional and integer quantum Hall transitions. From these, we extract the value of the dynamical exponent
z
≈ 1. We have achieved this in ultra-high mobility trilayer graphene devices with a metallic screening layer close to the conduction channels. The observation of these global critical exponents across various quantum Hall phase transitions was masked in previous studies by significant sample-to-sample variation in the measured values of
κ
in conventional semiconductor heterostructures, where long-range correlated disorder dominates. We show that the robust scaling exponents are valid in the limit of short-range disorder correlations.
The relationship between the integer and fractional quantum Hall states are of fundamental importance in condensed matter physics. Here, the authors report a universality of phase transitions in both regimes in ultraclean trilayer graphene samples. |
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ISSN: | 2041-1723 2041-1723 |
DOI: | 10.1038/s41467-024-52927-w |