REALIZATION OF SOLAR CELLS BASED ON SILICON/OXIDE JUNCTIONS
Transparent and conductive films of SrTiO 3 , ITO, and Tl 2 O 3 have been deposited by R.F. cathodic sputtering and by anodic oxidation onto Si substrates in order to realize SIS cells. A photoconversion efficiency of 8.8% has been obtained for Si/SiO x /Tl 2 O 3 cells. On the other hand for Si/SiO...
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Veröffentlicht in: | Active and Passive Electronic Components 1990, Vol.1990 (2), p.47-52 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Transparent and conductive films of SrTiO 3 , ITO, and Tl 2 O 3 have been deposited by R.F. cathodic sputtering and by anodic oxidation onto Si substrates in order to realize SIS cells. A photoconversion efficiency of 8.8% has been obtained for Si/SiO x /Tl 2 O 3 cells. On the other hand for Si/SiO x /SrTiO 3 (ITO) the photoconversion efficiency is lower than 1% because of the too large thickness of the SiO x interfacial layer. |
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ISSN: | 0882-7516 1563-5031 |
DOI: | 10.1155/1990/31452 |