Photoluminescence Spectroscopy of CdTe/ZnTe Self-Assembled Quantum Dots

Photoluminescence Spectroscopy of CdTe/ZnTe Self-Assembled Quantum Dots

We present photoluminescence (PL) measurements of two different, 3 monolayers and 12 monolayers (ml), CdTe self-assembled quantum dot (SAQD) samples. The spectra were recorded in the temperature range 20 K–300 K, with photoexcitation over the ZnTe barrier layer. PL spectra displayed two main emissio...

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Veröffentlicht in:International Journal of Photoenergy 2009-01, Vol.2009, p.1-4
Hauptverfasser: Romčević, Nebojša, Romčević, Maja, Kostić, Radmila, Stojanović, Dušanka, Milutinović, Aleksandra, Trajić, Jelena, Karczewski, Grzegorz, Galazka, Robert
Format: Artikel
Sprache:eng
Schlagworte:
Methods
Molecular beam epitaxy
Photoluminescence
Quantum dots
Science
Semiconductors
Spectrum analysis
Studies
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Zusammenfassung:We present photoluminescence (PL) measurements of two different, 3 monolayers and 12 monolayers (ml), CdTe self-assembled quantum dot (SAQD) samples. The spectra were recorded in the temperature range 20 K–300 K, with photoexcitation over the ZnTe barrier layer. PL spectra displayed two main emission bands. High-energy PL emission (E1) is ZnTe LO like phonon- (ωLO = 204.2 cm−1 (3 ml), ωLO = 207.3 cm−1 (12 ml)) assisted deexcitation. Dominant low-energy band (E2) presents the direct deexcitation to ground state of the CdTe quantum dots.
ISSN:1110-662X
1687-529X
DOI:10.1155/2009/358790