Design of on‐chip antennas for THz detector and source in CMOS (Invited paper)

Different on‐chip antennas in Complementary Metal‐Oxide‐Semiconductor (CMOS) technology for THz detector and source are proposed. Firstly, the size of these antennas is estimated with an equivalent CMOS substrate model. Finally, through electromagnetic simulation, the structure optimised and slotted...

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Veröffentlicht in:IET microwaves, antennas & propagation antennas & propagation, 2023-05, Vol.17 (6), p.454-466
Hauptverfasser: Xu, Lei‐Jun, Zhao, Xin‐Ke, Bai, Xue
Format: Artikel
Sprache:eng
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Zusammenfassung:Different on‐chip antennas in Complementary Metal‐Oxide‐Semiconductor (CMOS) technology for THz detector and source are proposed. Firstly, the size of these antennas is estimated with an equivalent CMOS substrate model. Finally, through electromagnetic simulation, the structure optimised and slotted the on‐chip antenna to realise multi‐band detection, miniaturised detection, and miniaturised source. For the THz detector, multi‐band antennas with a dual‐ring structure and miniaturised antennas with circular and diamond structures are designed. At the frequency of 300, 600, and 800 GHz, the gain of the ring antennas is 5.7, 7.2, and 7.2 dBi, respectively. The gain of the circular and diamond antenna is 5.3 and 5.96 dBi at 300 GHz. For the THz source, rectangular‐slot and T‐slot antennas are designed at the frequency of 300 GHz and the gain of the rectangular‐slot and T‐slot antennas is 2.92 and 3.87 dBi, respectively. Multi‐band antennas and miniaturised antennas effectively save the occupation area and improve the performance of the THz system. The effectiveness of antennas is verified by the measurement of the detector and the source, which indicates that the proposed on‐chip antennas have potential prospects for CMOS THz applications. In this paper, different THz detector and source in Complementary Metal‐Oxide‐Semiconductor technology are designed. All antennas are verified by the measurement of the THz detector and the source.
ISSN:1751-8725
1751-8733
DOI:10.1049/mia2.12361