A Spin‐Orbit Torque Switch at Ferromagnet/Antiferromagnet Interface Toward Stochastic or Memristive Applications via Tailoring Antiferromagnetic Ordering

Antiferromagnet (AFM) has currently participated in the spin‐orbit torque (SOT) technology due to its great potential to be applied to the field‐free SOT switching and to promote the thermal stability of MRAM. However, the effect of varying AFM ordering on the SOT switching and the associated properties is still not comprehensively understood. This work reports how an AFM ordering modifies the strength of Dzyaloshinskii–Moriya‐interaction (DMI) in a heavy metal (Pt)/FM (Co)/AFM (IrMn) trilayer and its effects on SOT switching. Increasing the AFM ordering reflects the enhanced exchange bias through increasing IrMn thickness appears to significantly reduce the DMI strength of the trilayer. Controlling the IrMn thickness appears to serve as a unique switch to activate memristivity/stochasticity in the devices via tailoring AFM ordering on exchange bias: The strong AFM ordering via increasing IrMn thickness enables to increase the stability of multi‐levels for SOT switching, which promotes the memristivity for neuromorphic application. On the contrary, the weak AFM ordering via reducing IrMn thickness will lead to significant stochasticity for the physically unclonable functionality. This work demonstrates an intrinsic tuning over the AFM ordering will serve as a switch to turn the SOT device into a stochastic/memristive cell to bridge probabilistic and neuromorphic computing. This work reports a study of how to activate the stochasticity/memristivity in a spin‐orbit torque device composed of a heavy‐metal/ferromagnet/antiferromagnet trilayer. Via tailoring the antiferromagnetic order on the presence of exchange bias, the strength of Dzyaloshinskii–Moriya interaction in the trilayer can be manipulated to behave as either a stochastic cell for physically unclonable function or a memristive cell for neuromorphic computing.