Procedures and Properties for a Direct Nano-Micro Integration of Metal and Semiconductor Nanowires on Si Chips

1-dimensional metal and semiconductor nanostructures exhibit interesting physical properties, but their integration into modern electronic devices is often a very challenging task. Finding the appropriate supports for nanostructures and nanoscale contacts are highly desired aspects in this regard. I...

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Veröffentlicht in:Journal of nanotechnology 2012-01, Vol.2012 (2012), p.1-13
Hauptverfasser: Gedamu, Dawit, Paulowicz, Ingo, Jebril, Seid, Kumar Mishra, Yogendra, Adelung, Rainer
Format: Artikel
Sprache:eng
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Zusammenfassung:1-dimensional metal and semiconductor nanostructures exhibit interesting physical properties, but their integration into modern electronic devices is often a very challenging task. Finding the appropriate supports for nanostructures and nanoscale contacts are highly desired aspects in this regard. In present work we demonstrate the fabrication of 1D nano- and mesostructures between microstructured contacts formed directly on a silicon chip either by a thin film fracture (TFF) approach or by a modified vapor-liquid-solid (MVLS) approach. In principle, both approaches offer the possibilities to integrate these nano-meso structures in wafer-level fabrications. Electrical properties of these nano-micro structures integrated on Si chips and their preliminary applications in the direction of sensors and field effect transistors are also presented.
ISSN:1687-9503
1687-9511
DOI:10.1155/2012/325732