Author Correction: Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor

Author Correction: Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

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Veröffentlicht in:Scientific reports 2021-06, Vol.11 (1), p.12657-12657, Article 12657
Hauptverfasser: Dai, Mingzhi, Wang, Weiliang, Wang, Pengjun, Iqbal, Muhammad Zahir, Annabi, Nasim, Amin, Nasir
Format: Artikel
Sprache:eng
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multidisciplinary
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Science (multidisciplinary)
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Zusammenfassung:An amendment to this paper has been published and can be accessed via a link at the top of the paper.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-021-91377-y