High-Power and High-Efficiency 1.3- \mu\hbox Superluminescent Diode With Flat-Top and Ultrawide Emission Bandwidth

High-Power and High-Efficiency 1.3- \mu\hbox Superluminescent Diode With Flat-Top and Ultrawide Emission Bandwidth

We report on a flat-top and ultrawide emission bandwidth of 125 nm from InGaAsP/InP multiple quantum-well (MQW) superluminescent diode with antireflection coated and tilted ridge-waveguide device configuration. A total output power in excess of 70 mW with an average power spectral density of 0.56 mW...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE photonics journal 2015-02, Vol.7 (1), p.1-8
Hauptverfasser: Khan, M. Z. M., Alhashim, H. H., Ng, T. K., Ooi, B. S.
Format: Artikel
Sprache:eng
Schlagworte:
Bandwidth
Biomedical optical imaging
Current measurement
Density
Devices
Emission
high-power
Multiple Quantum-wells
Quantum well devices
Quantum wells
Ripples
Spectra
Stimulated emission
superluminescent diode
Superluminescent diodes
Temperature measurement
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report on a flat-top and ultrawide emission bandwidth of 125 nm from InGaAsP/InP multiple quantum-well (MQW) superluminescent diode with antireflection coated and tilted ridge-waveguide device configuration. A total output power in excess of 70 mW with an average power spectral density of 0.56 mW/nm and spectral ripple ≤ 1.2 ± 0.5 dB is measured from the device. Wall-plug efficiency and output power as high as 14% and 80 mW, respectively, is demonstrated from this batch of devices. We attribute the broad emission to the inherent inhomogeneity of the electron-heavy-hole (e-hh) and electron-light-hole (e-lh) recombination of the ground state and the first excited state of the MQWs and their simultaneous emission.
ISSN:1943-0647
DOI:10.1109/JPHOT.2015.2399442