Cs/O co-adsorption on C-doped GaAs surface: From first-principles simulation to experiment
C-doped GaAs is considered a potential material for negative electron affinity photocathodes, where the p-type doped property is beneficial to photoemission. To clarify the stability and efficiency during Cs/O activation, the gradient concentration of Cs adsorption and Cs/O co-adsorption models of C...
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Veröffentlicht in: | AIP advances 2023-07, Vol.13 (7), p.075017-075017-6 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | C-doped GaAs is considered a potential material for negative electron affinity photocathodes, where the p-type doped property is beneficial to photoemission. To clarify the stability and efficiency during Cs/O activation, the gradient concentration of Cs adsorption and Cs/O co-adsorption models of C-doped GaAs are established. The work function, adsorption energy, and surface dipole moment are intensified by first principles calculation based on density functional theory. Experimental results demonstrate that Cs/O activation effectively enhances the performance of C-doped GaAs photocathodes, resulting in high levels of quantum efficiency. Therefore, we conclude that C-doped GaAs photocathodes have the potential to significantly improve the photoelectric emission performance and stability of GaAs photocathodes, making them a viable candidate for future applications. |
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ISSN: | 2158-3226 2158-3226 |
DOI: | 10.1063/5.0147752 |