Cs/O co-adsorption on C-doped GaAs surface: From first-principles simulation to experiment

C-doped GaAs is considered a potential material for negative electron affinity photocathodes, where the p-type doped property is beneficial to photoemission. To clarify the stability and efficiency during Cs/O activation, the gradient concentration of Cs adsorption and Cs/O co-adsorption models of C...

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Veröffentlicht in:AIP advances 2023-07, Vol.13 (7), p.075017-075017-6
Hauptverfasser: Guo, Xin, Shi, Feng, Zhang, Ruoyu, Gan, Linyu, Jia, Tiantian, Du, Jinjuan, Qiu, Hongjin, Zhang, Yijun
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Sprache:eng
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Zusammenfassung:C-doped GaAs is considered a potential material for negative electron affinity photocathodes, where the p-type doped property is beneficial to photoemission. To clarify the stability and efficiency during Cs/O activation, the gradient concentration of Cs adsorption and Cs/O co-adsorption models of C-doped GaAs are established. The work function, adsorption energy, and surface dipole moment are intensified by first principles calculation based on density functional theory. Experimental results demonstrate that Cs/O activation effectively enhances the performance of C-doped GaAs photocathodes, resulting in high levels of quantum efficiency. Therefore, we conclude that C-doped GaAs photocathodes have the potential to significantly improve the photoelectric emission performance and stability of GaAs photocathodes, making them a viable candidate for future applications.
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0147752