Author Correction: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

The original version of this Article contained an error in the second sentence of the second paragraph of the ‘Electrical properties of fluorinated graphene contacts’ section of the Results, which incorrectly read ‘The mobility was calculated by the Drude model, μ  =  ne / σ where μ , n , e , and σ...

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Veröffentlicht in:Nature communications 2018-11, Vol.9 (1), p.4965-1, Article 4965
Hauptverfasser: Son, Jangyup, Kwon, Junyoung, Kim, SunPhil, Lv, Yinchuan, Yu, Jaehyung, Lee, Jong-Young, Ryu, Huije, Watanabe, Kenji, Taniguchi, Takashi, Garrido-Menacho, Rita, Mason, Nadya, Ertekin, Elif, Huang, Pinshane Y., Lee, Gwan-Hyoung, van der Zande, Arend M.
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Sprache:eng
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Zusammenfassung:The original version of this Article contained an error in the second sentence of the second paragraph of the ‘Electrical properties of fluorinated graphene contacts’ section of the Results, which incorrectly read ‘The mobility was calculated by the Drude model, μ  =  ne / σ where μ , n , e , and σ are the carrier mobility, carrier density, electron charge, and sheet conductivity, respectively’. The correct version states ‘ μ  =  σ/ne ’ in place of ‘ μ  =  ne / σ ’. This has been corrected in both the PDF and HTML versions of the Article.
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-018-07297-5