Recent Progress of Organic–Inorganic Hybrid Perovskites in RRAM, Artificial Synapse, and Logic Operation

Organic–inorganic hybrid perovskites (OHPs) with a rich reservoir of distinct physical attributes have been considered as promising resistive switching materials for next‐generation electronic devices, including resistive random‐access memory (RRAM) devices, artificial synapses, and logic operation. In this review, we first briefly introduce the structural and photoelectronic properties of OHPs materials, followed by elaborating the typical lateral/vertical device architectures and commonly‐used device fabrication technologies. Secondly, recent progress of OHPs in three categories of RRAM, artificial synapses, and logic operation, including various materials design, outstanding electrical behaviors, and multifunctional applications, are well discussed. Besides, the operational mechanisms and performance improvement strategies are summarized in a recapitulative way. Finally, current challenges and future development prospects of OHPs‐based devices are demonstrated to provide a better guideline for the next‐generation technical revolution. This review offers an encouraging recognition that OHPs hold immense expectation to keep up with the upcoming big‐data and artificial intelligence era. Organic–inorganic hybrid perovskites (OHPs) with numerous physical attributes have been considered as a promising contender for next‐generation information storage and processing technologies. Here, we offer a timely review about the recent progress of OHPs in RRAM, artificial synapses, and logic operation. The challenges and development prospects are also discussed.