An enhanced 13‐level triple voltage gain switched capacitor inverter with lower power electronics devices
In this study, a 13‐level switched‐capacitor inverter with triple voltage gain is proposed. The proposed structure generates 13‐level output voltage using only one DC source, eleven switches, and three capacitors. The capacitors have the capability of self‐balancing without the use of additional cir...
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Veröffentlicht in: | IET power electronics 2024-11, Vol.17 (14), p.1925-1942 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this study, a 13‐level switched‐capacitor inverter with triple voltage gain is proposed. The proposed structure generates 13‐level output voltage using only one DC source, eleven switches, and three capacitors. The capacitors have the capability of self‐balancing without the use of additional circuits or complex control methods. Additionally, the inrush current of the capacitors has been reduced using a soft charging method. The proposed structure has been compared with different 13‐level structures presented in recent studies in terms of various parameters such as the number of semiconductor devices, the number of DC sources, voltage gain, Maximum Blocking Voltage (MBV), and Total standing Voltage (TSV). Another advantage of the proposed structure is the non‐use of any diode and its cost‐effectiveness. In addition, the power losses of the proposed structure have been evaluated, and its efficiency has been calculated for various output powers. Finally, the performance of the proposed structure has been verified through simulation and laboratory implementation under both stable and various dynamic conditions.
The proposed triple voltage gain switched‐capacitor inverter generates 13‐level output voltage using only one DC source, eleven switches, and three capacitors. The capacitors have the capability of self‐balancing without the use of additional circuits or complex control methods, and the inrush current of the capacitors has been reduced using a soft charging method. A comprehensive comparison in terms of various parameters such as the number of semiconductor devices, the number of DC sources, voltage gain, Maximum Blocking Voltage (MBV), and Total standing Voltage (TSV) demonstrate the superiority of the proposed converter. |
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ISSN: | 1755-4535 1755-4543 |
DOI: | 10.1049/pel2.12748 |