Growth of GaAs-based VCSEL/RCE Structures for Optoelectronic Applications via Molecular Beam Epitaxy

Growth of GaAs-based VCSEL/RCE Structures for Optoelectronic Applications via Molecular Beam Epitaxy

High intensity and sharp emission peaks, at light-hole (842 nm) and heavy-hole (857 nm) excitonic transitionsfor a 90 Å GaAs quantum well (QW) were observed for vertical-cavity surface-emitting laser (VCSEL)structure. Excellent wavelength selectivity and sensitivity were demonstrated by resonant cav...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Science Diliman 2003-06, Vol.15 (1), p.1-5
Hauptverfasser: A. S. Somintac, E. Estacio, M. F. Bailon, A. A. Salvador
Format: Artikel
Sprache:eng
Schlagworte:
Optoelectronic application
VCSEL
vertical-cavity surface-emitting laser
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:High intensity and sharp emission peaks, at light-hole (842 nm) and heavy-hole (857 nm) excitonic transitionsfor a 90 Å GaAs quantum well (QW) were observed for vertical-cavity surface-emitting laser (VCSEL)structure. Excellent wavelength selectivity and sensitivity were demonstrated by resonant cavity enhanced(RCE) photodetector at 859 nm, corresponding to the energy level of a 95 Å GaAs quantum well.
ISSN:0115-7809
2012-0818