Superconductivity below 20 K in heavily electron-doped surface layer of FeSe bulk crystal
A superconducting transition temperature ( T c ) as high as 100 K was recently discovered in one monolayer FeSe grown on SrTiO 3 . The discovery ignited efforts to identify the mechanism for the markedly enhanced T c from its bulk value of 8 K. There are two main views about the origin of the T c en...
Gespeichert in:
Veröffentlicht in: | Nature communications 2016-04, Vol.7 (1), p.11116-11116, Article 11116 |
---|---|
Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A superconducting transition temperature (
T
c
) as high as 100 K was recently discovered in one monolayer FeSe grown on SrTiO
3
. The discovery ignited efforts to identify the mechanism for the markedly enhanced
T
c
from its bulk value of 8 K. There are two main views about the origin of the
T
c
enhancement: interfacial effects and/or excess electrons with strong electron correlation. Here, we report the observation of superconductivity below 20 K in surface electron-doped bulk FeSe. The doped surface layer possesses all the key spectroscopic aspects of the monolayer FeSe on SrTiO
3
. Without interfacial effects, the surface layer state has a moderate
T
c
of 20 K with a smaller gap opening of 4.2 meV. Our results show that excess electrons with strong correlation cannot induce the maximum
T
c
, which in turn reveals the need for interfacial effects to achieve the highest
T
c
in one monolayer FeSe on SrTiO
3
.
Thin FeSe film on SrTiO
3
substrate becomes a superconductor with a transition temperature over 100 K, yet the origin remains controversial. Here, Seo
et al
. show superconductivity below 20 K on the electron-doped surface of an FeSe crystal, suggesting a decisive role of interfacial effects in the enhancement of superconductivity. |
---|---|
ISSN: | 2041-1723 2041-1723 |
DOI: | 10.1038/ncomms11116 |