La-doped BaSnO3 for electromagnetic shielding transparent conductors

In this work, we find that La-doped BaSnO 3 (BLSO) is shown to be a promising electromagnetic shielding transparent conductor. While films grown on industrially practical optoelectronic MgAl 2 O 4 substrates have higher sheet resistance by three orders of magnitude than in previous reports, we show how to recover the sheet resistance close to the single-crystal level by use of an MgO template layer which enables high quality (001)-oriented BLSO epitaxial film growth on (001) MgAl 2 O 4 . There is a positive correlation between crystallinity and conductivity; high crystallinity minimizes scattering of free electrons. By applying this design principle to 5–20% doped films, we find that highly crystalline 5% La-doped BLSO films exhibit low sheet resistance of ~ 8.7 Ω ▯ −1 , high visible transmittance of ~ 80%, and high X-band electromagnetic shielding effectiveness of ~ 25.9 dB, thus outperforming transparent conducting oxides films of Sn-doped In 2 O 3 and SrMoO 3 . Graphical Abstract