The Wafer-Level Integration of Single-Crystal LiNbO3 on Silicon via Polyimide Material

In situ measurements of sensing signals in space platforms requires that the micro-electro-mechanical system (MEMS) sensors be located directly at the point to be measured and in contact with the subject to be measured. Traditional radiation-tolerant silicon-based MEMS sensors cannot acquire spatial...

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Veröffentlicht in:Micromachines (Basel) 2021-01, Vol.12 (1), p.70, Article 70
Hauptverfasser: Yang, Xiangyu, Geng, Wenping, Bi, Kaixi, Mei, Linyu, Li, Yaqing, He, Jian, Mu, Jiliang, Hou, Xiaojuan, Chou, Xiujian
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Sprache:eng
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Zusammenfassung:In situ measurements of sensing signals in space platforms requires that the micro-electro-mechanical system (MEMS) sensors be located directly at the point to be measured and in contact with the subject to be measured. Traditional radiation-tolerant silicon-based MEMS sensors cannot acquire spatial signals directly. Compared to silicon-based structures, LiNbO3 single crystalline has wide application prospects in the aerospace field owing to its excellent corrosion resistance, low-temperature resistance and radiation resistance. In our work, 4-inch LiNbO3 and LiNbO3/Cr/Au wafers are fabricated to silicon substrate by means of a polyimide bonding method, respectively. The low-temperature bonding process (
ISSN:2072-666X
2072-666X
DOI:10.3390/mi12010070