Investigation of V1-xTixFeSb Semiconductor Solid Solution. I. Peculiarities of Electrokinetic Characteristics
The peculiarities of the temperature and concentration characteristics of resistivity and thermopower of V1-xTixFeSb semiconductor solid solution were investigated in the temperature and concentration ranges of T = 4.2 -400 K and Ті ≈ 9.5·1019–3.6·1021 см-3 (х = 0.005 - 0.20), respectively. The exi...
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Veröffentlicht in: | Fìzika ì hìmìâ tverdogo tìla (Online) 2016-03, Vol.16 (1), p.111-115 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The peculiarities of the temperature and concentration characteristics of resistivity and thermopower of V1-xTixFeSb semiconductor solid solution were investigated in the temperature and concentration ranges of T = 4.2 -400 K and Ті ≈ 9.5·1019–3.6·1021 см-3 (х = 0.005 - 0.20), respectively. The existence of previously unknown mechanism for the generation of structural defects with donor nature which determined the conduction of n-VFeSb and V1-xTixFeSb was established. The acceptor type of structural defects generated in V1-xTixFeSb by substitution of V atoms by Ti ones was confirmed. |
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ISSN: | 1729-4428 2309-8589 |
DOI: | 10.15330/pcss.16.1.111-115 |