Self-Compliance and High Performance Pt/HfOx/Ti RRAM Achieved through Annealing

Self-Compliance and High Performance Pt/HfOx/Ti RRAM Achieved through Annealing

A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfOx/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 °C decreased, and the switching ratio and uniformity improved. Tests on the de...

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Veröffentlicht in:Nanomaterials (Basel, Switzerland) Switzerland), 2020-03, Vol.10 (3), p.457
Hauptverfasser: Wu, Lei, Liu, Hongxia, Lin, Jinfu, Wang, Shulong
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Bias
Compliance
Electrodes
Fatigue tests
hfox
Random access memory
rram
self-compliance
Switching
switching mechanism
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Zusammenfassung:A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfOx/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 °C decreased, and the switching ratio and uniformity improved. Tests on the device’s cycling endurance and data retention characteristics found that the device had over 1000 erase/write endurance and over 105 s of lifetime (85 °C). The switching mechanisms of the devices before and after annealing were also discussed.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano10030457