Enhanced energy storage performance in Ag(Nb,Ta)O3 films via interface engineering

Dielectric capacitors with ultrahigh power density and ultra-fast charge/discharge rate are highly desired in pulse power fields. Environmental-friendly AgNbO3 family have been actively studied for its large polarization and antiferroelectric nature, which greatly boost the electric energy storage p...

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Veröffentlicht in:	Journal of Materiomics 2025-03, Vol.11 (2), p.100895, Article 100895
Hauptverfasser:	Zhai, Xiao, Ouyang, Jun, Kuai, Weijie, Xue, Yinxiu, Wang, Kun, Luo, Nengneng, Cheng, Hongbo, Zhu, Hanfei, Liu, Chao, Zheng, Limei
Format:	Artikel
Sprache:	eng
Schlagworte:	AgNbO3 Dielectric capacitors Energy storage Interface engineering
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Dielectric capacitors with ultrahigh power density and ultra-fast charge/discharge rate are highly desired in pulse power fields. Environmental-friendly AgNbO3 family have been actively studied for its large polarization and antiferroelectric nature, which greatly boost the electric energy storage performance. However, high-quality AgNbO3-based films are difficult to fabricate, leading to a low breakdown field Eb (
ISSN:	2352-8478
DOI:	10.1016/j.jmat.2024.05.005