Gallium-Nitride Semiconductor Technology and Its Practical Design Challenges in Power Electronics Applications: An Overview

This paper will revise, experimentally investigate, and discuss the main application challenges related to gallium nitride power semiconductors in switch-mode power converters. Gallium Nitride (GaN) devices are inherently gaining space in the market. Due to its high switching speed and operational s...

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Veröffentlicht in:	Energies (Basel) 2019-07, Vol.12 (14), p.2663
Hauptverfasser:	Mauricio Dalla Vecchia, Ravyts, Simon, Giel Van den Broeck, Driesen, Johan
Format:	Artikel
Sprache:	eng
Schlagworte:	Alternating current Circuit design Converters Design Efficiency Electric converters Electric potential Electronics Electronics industry Engineers Gallium gallium nitride semiconductors Gallium nitrides Heat sinks Layouts New technology Parasitics (electronics) Passive components PCB compounds Power converters power electronics practical challenges Researchers Semiconductors Silicon carbide Switching theory Technology Transistors Voltage
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Beschreibung
Zusammenfassung:	This paper will revise, experimentally investigate, and discuss the main application challenges related to gallium nitride power semiconductors in switch-mode power converters. Gallium Nitride (GaN) devices are inherently gaining space in the market. Due to its high switching speed and operational switching frequency, challenges related to the circuit design procedure, passive component selection, thermal management, and experimental testing are currently faced by power electronics engineers. Therefore, the focus of this paper is on low-voltage (
ISSN:	1996-1073 1996-1073
DOI:	10.3390/en12142663