Polycrystalline silicon PhC cavities for CMOS on-chip integration

In this work, we present an on-chip 2D and 3D photonics integration solution compatible with Front End of Line integration (FEOL) using deposited polycrystalline silicon (poly:Si) for optical interconnects applications. Deposited silicon integration on a bulk silicon wafer is here discussed in all i...

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Veröffentlicht in:Scientific reports 2022-10, Vol.12 (1), p.17097-17097, Article 17097
Hauptverfasser: Iadanza, S., Devarapu, G. C. R., Blake, A., Alba, P. Acosta, Pedini, J.-M., O’Faolain, L.
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Sprache:eng
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Zusammenfassung:In this work, we present an on-chip 2D and 3D photonics integration solution compatible with Front End of Line integration (FEOL) using deposited polycrystalline silicon (poly:Si) for optical interconnects applications. Deposited silicon integration on a bulk silicon wafer is here discussed in all its processing steps and configurations. Moreover, results of deposited silicon high-Q Photonic Crystal (PhC) resonators are shown, demonstrating the possibility to employ optical resonators patterned on this material in the next generation of 2D and 3D integrated optical interconnects.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-022-21578-6