Spectroscopic visualization and phase manipulation of chiral charge density waves in 1T-TaS2

The chiral charge density wave is a many-body collective phenomenon in condensed matter that may play a role in unconventional superconductivity and topological physics. Two-dimensional chiral charge density waves provide the building blocks for the fabrication of various stacking structures and chi...

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Veröffentlicht in:Nature communications 2023-04, Vol.14 (1), p.2223-2223, Article 2223
Hauptverfasser: Zhao, Yan, Nie, Zhengwei, Hong, Hao, Qiu, Xia, Han, Shiyi, Yu, Yue, Liu, Mengxi, Qiu, Xiaohui, Liu, Kaihui, Meng, Sheng, Tong, Lianming, Zhang, Jin
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Sprache:eng
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Zusammenfassung:The chiral charge density wave is a many-body collective phenomenon in condensed matter that may play a role in unconventional superconductivity and topological physics. Two-dimensional chiral charge density waves provide the building blocks for the fabrication of various stacking structures and chiral homostructures, in which physical properties such as chiral currents and the anomalous Hall effect may emerge. Here, we demonstrate the phase manipulation of two-dimensional chiral charge density waves and the design of in-plane chiral homostructures in 1T-TaS 2 . We use chiral Raman spectroscopy to directly monitor the chirality switching of the charge density wave—revealing a temperature-mediated reversible chirality switching. We find that interlayer stacking favours homochirality configurations, which is confirmed by first-principles calculations. By exploiting the interlayer chirality-locking effect, we realise in-plane chiral homostructures in 1T-TaS 2 . Our results provide a versatile way to manipulate chiral collective phases by interlayer coupling in layered van der Waals semiconductors. Two-dimensional charge density waves in layered semiconductors may exhibit chirality. Here, the authors utilize thermal annealing to reversibly switch the in-plane chirality of charge density waves in 1T-TaS 2 and demonstrate a vertical chirality-locking effect between the van der Waals-stacked layers.
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-023-37927-6