Low‐Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe2 for In‐Memory Computing

Low‐Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe2 for In‐Memory Computing

Memristive logic device is a promising unit for beyond von Neumann computing systems and 2D materials are widely used because of their controllable interfacial properties. Most of these 2D memristive devices, however, are made from semiconducting chalcogenides which fail to gate the off‐state curren...

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Veröffentlicht in:Advanced science 2021-08, Vol.8 (15), p.e2005038-n/a
Hauptverfasser: Liu, Long, Li, Yi, Huang, Xiaodi, Chen, Jia, Yang, Zhe, Xue, Kan‐Hao, Xu, Ming, Chen, Huawei, Zhou, Peng, Miao, Xiangshui
Format: Artikel
Sprache:eng
Schlagworte:
2D HfSe2
Electrodes
Energy
in‐memory computing
low‐power consumption
memristors
Microscopy
Oxidation
Plasma
resistive switching
Spectrum analysis
Transistors
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Zusammenfassung:Memristive logic device is a promising unit for beyond von Neumann computing systems and 2D materials are widely used because of their controllable interfacial properties. Most of these 2D memristive devices, however, are made from semiconducting chalcogenides which fail to gate the off‐state current. To this end, a crossbar device using 2D HfSe2 is fabricated, and then the top layers are oxidized into “high‐k” dielectric HfSexOy via oxygen plasma treatment, so that the cell resistance can be remarkably increased. This two‐terminal Ti/HfSexOy/HfSe2/Au device exhibits excellent forming‐free resistive switching performance with high switching speed (
ISSN:2198-3844
2198-3844
DOI:10.1002/advs.202005038