Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)

Transition metal dichalcogenide (TDMCs) placed on a 3D semiconductor substrate haveleads to significant advances in the electronic industry with new opportunities based on 2D/3D heterojunction based diverse devices without any restrictions, such as lattice compatibility. In this study, magnetron sputtering technique was used to grow layered tungsten disulfide (WS2) thin films onto p-Si and thus WS2/p-Si heterojunctions were created. The structural and chemical parameters of this sputtered WS2 films were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Electrical characterization of WS2/p-Si heterojunction was also obtained to investigate Log (I)-V and linear I-V characteristics. A typical diode like I-V behavior was observed with a five-ordered rectifying ratio. It was observed that the heterojunction has a barrier height of 0.48 eV, the leakage current at -0.2 V is 2.25×10-6 A and the ideality factor is 5.7. This work show that single step magnetron sputtering WS2/p-Si heterojunction has great importance for heterojunction based future nanoelectronic devices.