Sputter‐grown GeTe/Sb2Te3 superlattice interfacial phase change memory for low power and multi‐level‐cell operation

Sputter‐grown GeTe/Sb2Te3 superlattice interfacial phase change memory for low power and multi‐level‐cell operation

The multi‐level feature of GeTe/Sb2Te3 interfacial phase change memory was achieved by applying a designed voltage‐based pulse. It stably demonstrated five multi‐level states without interference for 90 cycles by varying the pulse width. GeTe/Sb2Te3 interfacial phase change memory demonstrated reten...

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Veröffentlicht in:Electronics Letters 2022-01, Vol.58 (1), p.38-40
Hauptverfasser: Jin, Soo‐Min, Kang, Shin‐Young, Kim, Hea‐Jee, Lee, Ju‐Young, Nam, In‐Ho, Shim, Tae‐Hun, Song, Yun‐Heub, Park, Jea‐Gun
Format: Artikel
Sprache:eng
Schlagworte:
Drift
Electrodes
Energy consumption
Memory circuits
Phase transitions
Pulse duration
Semiconductor storage
Sputter deposition
Superlattices
Temperature
Thin films
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Zusammenfassung:The multi‐level feature of GeTe/Sb2Te3 interfacial phase change memory was achieved by applying a designed voltage‐based pulse. It stably demonstrated five multi‐level states without interference for 90 cycles by varying the pulse width. GeTe/Sb2Te3 interfacial phase change memory demonstrated retention time of > 1.0 × 103 s, presenting the significantly low drift coefficient (ν) of 
ISSN:0013-5194
1350-911X
DOI:10.1049/ell2.12337