Investigation of Nitridation on the Band Alignment at MoS2/HfO2 Interfaces

The effect of nitridation treatment on the band alignment between few-layer MoS 2 and HfO 2 has been investigated by X-ray photoelectron spectroscopy. The valence (conduction) band offsets of MoS 2 /HfO 2 with and without nitridation treatment were determined to be 2.09 ± 0.1 (2.41 ± 0.1) and 2.34 ±...

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Veröffentlicht in:	Nanoscale research letters 2019-05, Vol.14 (1), p.1-6, Article 181
Hauptverfasser:	Huan, Ya-Wei, Liu, Wen-Jun, Tang, Xiao-Bing, Xue, Xiao-Yong, Wang, Xiao-Lei, Sun, Qing-Qing, Ding, Shi-Jin
Format:	Artikel
Sprache:	eng
Schlagworte:	Alignment Band alignment Chemistry and Materials Science Conduction Conduction bands Design optimization Electronic devices Electronic equipment Few-layer MoS2 Hafnium oxide Heterojunctions Interfaces Materials Science Molecular Medicine Molybdenum disulfide Nano Express Nanochemistry Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering Nitridation treatment Offsets Photoelectron spectroscopy Photoelectrons Two dimensional materials
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Zusammenfassung:	The effect of nitridation treatment on the band alignment between few-layer MoS 2 and HfO 2 has been investigated by X-ray photoelectron spectroscopy. The valence (conduction) band offsets of MoS 2 /HfO 2 with and without nitridation treatment were determined to be 2.09 ± 0.1 (2.41 ± 0.1) and 2.34 ± 0.1 (2.16 ± 0.1) eV, respectively. The tunable band alignment could be attributed to the Mo-N bonding formation and surface band bending for HfO 2 triggered by nitridation. This study on the energy band engineering of MoS 2 /HfO 2 heterojunctions may also be extended to other high-k dielectrics for integrating with two-dimensional materials to design and optimize their electronic devices.
ISSN:	1931-7573 1556-276X
DOI:	10.1186/s11671-019-3020-0