Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode

Atomic layer deposited (ALD) HfO2/Al2O3/HfO2 tri-layer resistive random access memory (RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent electrode. Highly stable and reliable multilevel conductance can be controlled by the set current compliance and reset stop vo...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Nanomaterials (Basel, Switzerland) Switzerland), 2020-10, Vol.10 (10), p.2069
Hauptverfasser: Mahata, Chandreswar, Kang, Myounggon, Kim, Sungjun
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Atomic layer deposited (ALD) HfO2/Al2O3/HfO2 tri-layer resistive random access memory (RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent electrode. Highly stable and reliable multilevel conductance can be controlled by the set current compliance and reset stop voltage in bipolar resistive switching. Improved gradual resistive switching was achieved because of the interdiffusion in the HfO2/Al2O3 interface where tri-valent Al incorporates with HfO2 and produces HfAlO. The uniformity in bipolar resistive switching with Ion/Ioff ratio (>10) and excellent endurance up to >103 cycles was achieved. Multilevel conductance levels in potentiation/depression were realized with constant amplitude pulse train and increasing pulse amplitude. Thus, tri-layer structure-based RRAM can be a potential candidate for the synaptic device in neuromorphic computing.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano10102069