A 7.5 mW –43 dB LO leakage source‐driven wideband CMOS millimeter‐wave mixer

A 7.5 mW –43 dB LO leakage source‐driven wideband CMOS millimeter‐wave mixer

This paper presents a millimeter‐wave (mm‐wave) V‐band mixer. The source‐driven transformer‐coupled up‐converter topology can alleviate the local oscillator (LO) leakage problem. The proposed V‐band up‐converter has been implemented on 65 nm CMOS technology. The experimental results show that the LO...

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Veröffentlicht in:Electronics letters 2021-05, Vol.57 (11), p.430-432
Hauptverfasser: Lin, Jiafu, Boon, Chirn Chye, Berenguer, Roc, Liu, Gui
Format: Artikel
Sprache:eng
Schlagworte:
Bandwidths
CMOS
CMOS integrated circuits
Leakage
Microwave integrated circuits
Modulators, demodulators, discriminators and mixers
Oscillators
Radio frequency
Topology
Transformers and reactors
Transistors
Transmitters
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Zusammenfassung:This paper presents a millimeter‐wave (mm‐wave) V‐band mixer. The source‐driven transformer‐coupled up‐converter topology can alleviate the local oscillator (LO) leakage problem. The proposed V‐band up‐converter has been implemented on 65 nm CMOS technology. The experimental results show that the LO leakage level can be reduced to –43.1 dB. The up‐converter occupies 0.11 mm2 in area excluding signal pads.
ISSN:0013-5194
1350-911X
DOI:10.1049/ell2.12164