Coherence of oscillations generated by single-electronic two-dimensional arrays of tunnel junctions

The single-electron devices (SEDs) are novel devices based on a new operation concept and technologies, with great scaling potential that has been fabricated and is under investigation. The SEDs are based on the controllable transfer of single electrons (SEs) between small conducting electrodes. The...

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Veröffentlicht in:AIMS electronics and electrical engineering 2020-07, Vol.4 (2), p.188-199
Hauptverfasser: F. Habbani, Nazim, F. Babikir, Sharief
Format: Artikel
Sprache:eng
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Zusammenfassung:The single-electron devices (SEDs) are novel devices based on a new operation concept and technologies, with great scaling potential that has been fabricated and is under investigation. The SEDs are based on the controllable transfer of single electrons (SEs) between small conducting electrodes. They have had already several demonstrative scientific experiments as well as enabled fabrication methods. The present work studies the coherence of signals in a two-dimensional homogeneous arrays of small tunnel junctions. The Monte-Carlo technique is used to simulate the circuit and collect the required statistics. The simulator is a hybrid simulator that uses at the beginning the Master Equation representation to compute the steady-state current through the circuit. It is shown, how the coherence of oscillations is strengthened with longer arrays structures, and that the coupled two-dimensional long arrays are having strong correlated tunnel events, when the finite frequency noise characteristics and oscillations pattern variation are addressed. The variation of both the applied voltage and the coupling capacitors is illustrated. The dependency of the transport process and distribution of time between the events on their setting parameters is shown and the coefficient of variation was calculated to clarify the results. Also, the state’s transition flow is reviewed for the traverse of electrons through the arrays structure for different bias conditions.
ISSN:2578-1588
2578-1588
DOI:10.3934/ElectrEng.2020.2.188