Extraordinarily Weak Temperature Dependence of the Drain Current in Small‐Molecule Schottky‐Contact‐Controlled Transistors through Active‐Layer and Contact Interplay

Low saturation voltages and extremely high intrinsic gain can be achieved in contact‐controlled thin‐film transistors (TFTs) with staggered device architecture, enabled by the energy barrier introduced at the source contact. The resulting device, the source‐gated transistor (SGT), is limited in its usefulness by the high temperature dependence of the drain current induced by the source energy barrier. Here, the interaction between the thermal characteristics of the source contact and the semiconductor to show drastically reduced temperature dependence for SGTs based on organic semiconductors (OSGTs) is exploited. This extraordinarily weak temperature dependence of the drain current is observed regardless of the height of the source energy barrier (27.8% in OSGTs with Ti contacts compared to 22.1% when using Au contacts, over a 34 K range). The reduction in mobility of the semiconductor offsets an increase in thermionic‐field emission of charge carriers at the source. This is a first for SGTs and provides a route to removing one of the last hurdles to their wider adoption. The OSGTs with Ti contacts also demonstrate: drain‐current saturation at very low drain‐source voltages (saturation factor of 0.22); noteworthy stability after 70 days; and minimal drain‐current variation with channel length or illumination. The interaction between the thermal characteristics of the source contact and the semiconductor drastically reduces temperature dependence for organic source‐gated transistors (OSGTs) based on evaporated DNTT. This first for SGTs provides a route to their wider adoption. Fabricated transistors also demonstrate saturation factor of 0.22; noteworthy stability after 70 days; and minimal drain current variation with channel length or illumination.