Theoretical and experimental study of the dark signal in CMOS image sensors affected by neutron radiation from a nuclear reactor

The CMOS image sensors (CISs) are irradiated with neutron from a nuclear reactor. The dark signal in CISs affected by neutron radiation is studied theoretically and experimentally. The Primary knock-on atoms (PKA) energy spectra for 1 MeV incident neutrons are simulated by Geant4. And the theoretica...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:AIP advances 2017-12, Vol.7 (12), p.125222-125222-9
Hauptverfasser: Xue, Yuanyuan, Wang, Zujun, He, Baoping, Yao, Zhibin, Liu, Minbo, Ma, Wuying, Sheng, Jiangkun, Dong, Guantao, Jin, Junshan
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The CMOS image sensors (CISs) are irradiated with neutron from a nuclear reactor. The dark signal in CISs affected by neutron radiation is studied theoretically and experimentally. The Primary knock-on atoms (PKA) energy spectra for 1 MeV incident neutrons are simulated by Geant4. And the theoretical models for the mean dark signal, dark signal non-uniformity (DSNU) and dark signal distribution versus neutron fluence are established. The results are found to be in good agreement with the experimental outputs. Finally, the dark signal in the CISs under the different neutron fluence conditions is estimated. This study provides the theoretical and experimental evidence for the displacement damage effects on the dark signal CISs.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4999664