Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

Using the methods of electron spectroscopy and slow electron diffraction, we studied the processes of the formation of nanosized metal silicide films in the near-surface region of Si (111) and Si (100) during low-energy implantation of Ba ions and alkaline elements. The optimal technological modes o...

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Veröffentlicht in:E3S web of conferences 2021-01, Vol.264, p.5037
Hauptverfasser: Bekpulatov, Ilkhom, Turapov, Ilkhom, Abraeva, Sevara, Normuminov, Jakhongir
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Sprache:eng
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Zusammenfassung:Using the methods of electron spectroscopy and slow electron diffraction, we studied the processes of the formation of nanosized metal silicide films in the near-surface region of Si (111) and Si (100) during low-energy implantation of Ba ions and alkaline elements. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. The type of surface superstructures of thin silicide films has been established.
ISSN:2267-1242
2555-0403
2267-1242
DOI:10.1051/e3sconf/202126405037