Ultra-low loss silicon nitride becomes even cooler

Ultra-low loss silicon nitride realized using deuterated precursors and low thermal budgets well within backend-of-line CMOS processing may accelerate widespread proliferation of their use.

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Bibliographische Detailangaben
Veröffentlicht in:	Light, science & applications science & applications, 2024-09, Vol.13 (1), p.233-3, Article 233
Hauptverfasser:	Tan, Dawn T. H., Chia, Xavier X.
Format:	Artikel
Sprache:	eng
Schlagworte:	639/624/400 639/766/400 Chemical vapor deposition High temperature Integrated circuits Lasers Microwaves News & Views news-and-views Optical and Electronic Materials Optical Devices Optical properties Optics Photonics Physics Physics and Astronomy Propagation RF and Optical Engineering Silicon nitride Views
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Beschreibung
Zusammenfassung:	Ultra-low loss silicon nitride realized using deuterated precursors and low thermal budgets well within backend-of-line CMOS processing may accelerate widespread proliferation of their use.
ISSN:	2047-7538 2095-5545 2047-7538
DOI:	10.1038/s41377-024-01576-1