Theoretical Simulation of a Room Temperature HgCdTe Long-Wave Detector for Fast Response − Operating Under Zero Bias Conditions
The paper reports on a long-wave infrared (cut-off wavelength ~ 9 μm) HgCdTe detector operating under nbiased condition and room temperature (300 K) for both short response time and high detectivity operation. The ptimal structure in terms of the response time and detectivity versus device architect...
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Veröffentlicht in: | Metrology and Measurement systems 2017-12, Vol.24 (4), p.729-738 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The paper reports on a long-wave infrared (cut-off wavelength ~ 9 μm) HgCdTe detector operating under nbiased condition and room temperature (300 K) for both short response time and high detectivity operation. The ptimal structure in terms of the response time and detectivity versus device architecture was shown. The response time of the long-wave (active layer Cd composition, x
= 0.19) HgCdTe detector for 300 K was calculated at a level of τ
~ 1 ns for zero bias condition, while the detectivity − at a level of D* ~ 10
cmHz
/W assuming immersion. It was presented that parameters of the active layer and P
barrier layer play a critical role in order to reach τ
≤ 1 ns. An extra series resistance related to the processing (R
in a range 5−10 Ω) increased the response time more than two times (τs ~ 2.3 ns). |
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ISSN: | 2300-1941 2080-9050 2300-1941 |
DOI: | 10.1515/mms-2017-0055 |