Design and Performance of a J Band MEMS Switch

This paper presents a novel J band (220-325 GHz) MEMS switch design. The equivalent circuits, the major parameters, capacitance, inductance and resistance in the circuit were extracted and calculated quantitatively to carry out the radio frequency analysis. In addition, the mechanical property of th...

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Veröffentlicht in:Micromachines (Basel) 2019-07, Vol.10 (7), p.467
Hauptverfasser: Zhang, Naibo, Yan, Ze, Song, Ruiliang, Wang, Chunting, Guo, Qiuquan, Yang, Jun
Format: Artikel
Sprache:eng
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Zusammenfassung:This paper presents a novel J band (220-325 GHz) MEMS switch design. The equivalent circuits, the major parameters, capacitance, inductance and resistance in the circuit were extracted and calculated quantitatively to carry out the radio frequency analysis. In addition, the mechanical property of the switch structure is analyzed, and the switching voltage is obtained. With the designed parameters, the MEMS switch is fabricated. The measurement results are in good agreement with simulation results, and the switch is actuated under a voltage of ~30 V. More importantly, the switch has achieved a low insertion loss of ~1.2 dB at 220 GHz and
ISSN:2072-666X
2072-666X
DOI:10.3390/mi10070467