Unusual charge states and lattice sites of Fe in Al x Ga1−x N:Mn
Charge states and lattice sites of Fe ions in virgin and Mn-doped Al _x Ga _1− _x N samples were investigated using ^57 Fe emission Mössbauer spectroscopy following radioactive ^57 Mn ^+ ion implantation at ISOLDE, CERN. In the undoped Al _x Ga _1− _x N, Fe ^2+ on Al/Ga sites associated with nitroge...
Gespeichert in:
Veröffentlicht in: | New journal of physics 2022-10, Vol.24 (10), p.103007 |
---|---|
Hauptverfasser: | , , , , , , , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Charge states and lattice sites of Fe ions in virgin and Mn-doped Al _x Ga _1− _x N samples were investigated using ^57 Fe emission Mössbauer spectroscopy following radioactive ^57 Mn ^+ ion implantation at ISOLDE, CERN. In the undoped Al _x Ga _1− _x N, Fe ^2+ on Al/Ga sites associated with nitrogen vacancies and Fe ^3+ on substitutional Al/Ga sites are identified. With Mn doping, the contribution of Fe ^3+ is considerably reduced and replaced instead by a corresponding emergence of a single-line-like component consistent with Fe ^4+ on Al/Ga sites. Density functional theory calculations confirm the Fe ^4+ charge state as stabilised by the presence of substitutional Mn ^2+ in its vicinity. The completely filled spin up orbitals in Mn ^2+ (3d ^5 ) are expected to enhance magnetic exchange interactions. The population of the Fe ^4+ state is less pronounced at high Al concentration in Al _x Ga _1− _x N:Mn, a behaviour attributable to hybridisation effects of 3d states to the semiconductor bands which weakens with increasing (decreasing) Al (Ga) content. Our results demonstrate that co-doping promotes the co-existence of unusual charge states of Fe ^4+ and Mn ^2+ , whereas their trivalent charge states prevail with either transition metal incorporated independently in III-nitrides. Co-doping thus opens up a new avenue for tailoring novel magnetic properties in doped semiconductors. |
---|---|
ISSN: | 1367-2630 |
DOI: | 10.1088/1367-2630/ac9499 |